2005. 12. 29 1/2 semiconductor technical data kds160v silicon epitaxial planar diode revision no : 0 ultra high speed switching application. features small package : vsc. low forward voltage. fast reverse recovery time. small total capacitance. maximum rating (ta=25 ) electrical characteristics (ta=25 ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 2 a power dissipation p d * 100 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.60 - v v f(2) i f =10ma - 0.72 - v f(3) i f =100ma - 0.90 1.20 reverse current i r v r =80v - - 0.5 a total capacitance c t v r =0v, f=1mhz - 0.9 3.0 pf reverse recovery time t rr i f =10ma - 1.6 4.0 ns * : mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. vsc dim millimeters a b c d e 1.4 0.05 cathode mark c d b a e f f 1.0 0.05 0.6 0.05 0.28 0.03 0.5 0.05 0.12 0.03 2 1 1. anode 2. cathode + _ + _ + _ + _ + _ + _ type name marking u f
2005. 12. 29 2/2 kds160v revision no : 0 1 0.1 reverse voltage v r (r) c t - v r reverse current i r ( a) 10 0 reverse voltage v r (v) total capacitance c t (pf) 0 i r - v r i f - v f forward voltage v f (v) 0 10 forward current i f (ma) 0.2 0.4 0.6 0.8 1.0 1.2 -2 -1 10 2 10 3 10 10 1 ta=100 c ta=25 c ta=-25 c 20 40 60 80 -3 -2 10 -1 10 1 10 ta=100 c ta=75 c ta=50 c ta=25 c 0.4 0.8 1.2 1.6 2.0 3 10 30 100 f=1mhz ta=25 c t rr - i f forward current i f (ma) 0.1 0.5 reverse recovery time t rr (ns) 0.3 1 3 10 30 100 1 3 5 10 30 50 100 ta=25 c fig. 1 0.3 fig. 1. reverse recovery time(t ) test circuit rr 50 ? 2k ? e 50 ? input waveform input 0.01 f dut output sampling oscilloscope (r in =50 ? ) waveform 0.1 i r 0 i r i f =10ma t rr pulse generator (r out =50 ? ) 50ns -6v 0
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